Pinholes in Al thin films: their effects on TFT characteristics and a taguchi method analysis of their origins

被引：21

作者：

Takatsuji, H ^{[1
]}

Arai, T ^{[1
]}

机构：

[1] IBM Japan Ltd, Display Business Unit LABR51, Yamato, Kanagawa 2428502, Japan

来源：

VACUUM | 2000年 / 59卷 / 2-3期

关键词：

D O I：

10.1016/S0042-207X(00)00323-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of pinholes in the aluminum gate electrode on the characteristics of thin-film transistors (TFTs) were investigated. It was found that the TFT characteristics an degraded by pinholes in the aluminum thin film in the case of an etching-stopper-type inverted staggered TFT fabricated by using a back-side exposure process. By means of Taguchi methods, it was found that the generation of pinholes in the aluminum thin film is strongly related to the sputtering parameters, and that the pinhole density is related to the surface roughness of the Al thin film. (C) 2000 Elsevier Science Ltd, All rights reserved.

引用

页码：606 / 613

页数：8

共 7 条

[1] HILLOCK GROWTH IN THIN-FILMS [J].

CHAUDHAR.P .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) :4339-4346

[2]

DINGWALL RB, 1989, ASQC QUAL C T, P710

[3]

GUNN TG, 21 CENTURY MANUFACTU, P83

[4] Whiskers grown on aluminum thin films during heat treatments [J].

Hinode, K ;

Homma, Y ;

Sasaki, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (04) :2570-2576

[5] Influence of adding transition metal elements to an aluminum target on electrical resistivity and hillock resistance in sputter-deposited aluminum alloy thin films [J].

Onishi, T ;

Iwamura, E ;

Takagi, K ;

Yoshikawa, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (05) :2728-2735

[6]

PHADKE MS, 1989, QUALITY ENG USING RO, P291

[7]

TSUKADA T, 1993, MATER RES SOC SYMP P, V284, P371

← 1 →