Computer model simulation of SiC diode reverse-bias instabilities due to deep energy impurity levels
被引:4
作者:
Joshi, RP
论文数: 0引用数: 0
h-index: 0
机构:
Old Dominion Univ, Dept Elect & Comp Engn, Norfolk, VA 23529 USAOld Dominion Univ, Dept Elect & Comp Engn, Norfolk, VA 23529 USA
Joshi, RP
[1
]
Fazi, C
论文数: 0引用数: 0
h-index: 0
机构:Old Dominion Univ, Dept Elect & Comp Engn, Norfolk, VA 23529 USA
Fazi, C
机构:
[1] Old Dominion Univ, Dept Elect & Comp Engn, Norfolk, VA 23529 USA
[2] USA, Res Lab, Adelphi, MD 20783 USA
来源:
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2
|
1998年
/
264-2卷
关键词:
SiC diodes;
high-field instabilities;
D O I:
10.4028/www.scientific.net/MSF.264-268.1033
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
We performed numerical simulations of the transient response of reverse-biased silicon carbide (SiC) diodes to fast voltage pulses, based on a drift-diffusion transport model. Our results reveal that SiC material containing "deep defects" can lead to high device currents and internal heating. This could potentially be detrimental to device stability and lead to premature device breakdown. The minority electrons within P-regions containing deep levels are shown to play an important role. These results suggest that defect control and suppression of deep states will be crucial for the successful development of stable SiC devices for high-power applications.