Beyond CMOS: quantum devices

被引:10
作者
Gautier, J
机构
[1] LETI (CEA - Technol. Avancees), 38054 Grenoble Cedex 9
关键词
D O I
10.1016/S0167-9317(97)00181-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Due to its unrivaled properties, the MOSFET has become the dominant device species. However, in spite of its remarkable adaptability to the scale down evolution, it will have to face practical limits around 30 nm gate length. Below that length, innovative devices, based on quantum mechanical effects, are already emerging. After optimization, they could compete with the MOSFET, transposing to devices the struggle for life theory from Charles Darwin. New devices and possible applications are reviewed. In addition, trends about the chances of success of the challengers are discussed. Among them, the Coulomb blockade based devices are the most promising, particularly for memory applications.
引用
收藏
页码:263 / 272
页数:10
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