Empirical potential study of the chemisorption of C2H2 and CH3 on the β-SiC(001) surface

被引:27
作者
Dyson, AJ [1 ]
Smith, PV [1 ]
机构
[1] Univ Newcastle, Dept Phys, Callaghan, NSW 2308, Australia
关键词
alkynes; chemisorption; construction and use of effective interatomic interactions; low index single crystal surfaces; methyl radical; molecular dynamics; silicon carbide;
D O I
10.1016/S0039-6028(97)00656-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have used an extended form of the Brenner empirical hydrocarbon potential to study the reconstructions of the clean beta-SiC(001) surface. and the chemisorption of C2H2 and CH3 molecules onto the silicon terminated (2 x 1) surface. For reference, chemisorption energies and minimum-energy geometries have also been obtained from Becke3LYP HF DFT cluster calculations, Optimal C2H2 chemisorption at low coverage was found to occur with the adsorbate molecule situated above the cave site. with the carbon-carbon bond oriented in the [110] direction parallel to the dimer rows, At 1 monolayer coverage this wits also the preferred structure, with the adsorbate molecules positioned in a staggered c(2 x 2) arrangement. Optimal CH3 chemisorption was found to occur with the CH3 radicals bonding directly to the surface dangling bonds. (C) 1998 Elsevier Science B.V.
引用
收藏
页码:24 / 39
页数:16
相关论文
共 48 条
[31]   Structural determination of beta-SiC(100)-c(2x2) from C-1s surface-core-exciton and Si-2p absorption [J].
Long, JP ;
Bermudez, VM ;
Ramaker, DE .
PHYSICAL REVIEW LETTERS, 1996, 76 (06) :991-994
[32]   RESULTS OBTAINED WITH THE CORRELATION-ENERGY DENSITY FUNCTIONALS OF BECKE AND LEE, YANG AND PARR [J].
MIEHLICH, B ;
SAVIN, A ;
STOLL, H ;
PREUSS, H .
CHEMICAL PHYSICS LETTERS, 1989, 157 (03) :200-206
[33]   MECHANISMS OF SIC GROWTH BY ALTERNATE SUPPLY OF SIH2CL2 AND C2H2 [J].
NAGASAWA, H ;
YAMAGUCHI, Y .
APPLIED SURFACE SCIENCE, 1994, 82-3 :405-409
[34]   MOLECULAR-DYNAMICS STUDIES OF ELEMENTARY SURFACE-REACTIONS OF C2H2 AND C2H IN LOW-PRESSURE DIAMOND-FILM FORMATION [J].
PEPLOSKI, J ;
THOMPSON, DL ;
RAFF, LM .
JOURNAL OF PHYSICAL CHEMISTRY, 1992, 96 (21) :8538-8544
[35]   Ab initio calculations of structural and electronic properties of prototype surfaces of group IV, III-V and II-VI semiconductors [J].
Pollmann, J ;
Kruger, P ;
Rohlfing, M ;
Sabisch, M ;
Vogel, D .
APPLIED SURFACE SCIENCE, 1996, 104 :1-16
[36]   STRUCTURAL-ANALYSIS OF THE BETA-SIC(100)-(2X1) SURFACE RECONSTRUCTION BY AUTOMATED TENSOR LEED [J].
POWERS, JM ;
WANDER, A ;
VANHOVE, MA ;
SOMORJAI, GA .
SURFACE SCIENCE, 1992, 260 (1-3) :L7-L10
[37]   STRUCTURAL-ANALYSIS OF THE BETA-SIC(100)-C(2X2) SURFACE RECONSTRUCTION BY AUTOMATED TENSOR LOW-ENERGY ELECTRON-DIFFRACTION [J].
POWERS, JM ;
WANDER, A ;
ROUS, PJ ;
VANHOVE, MA ;
SOMORJAI, GA .
PHYSICAL REVIEW B, 1991, 44 (20) :11159-11166
[38]   ENERGETICS OF NANOSCALE GRAPHITIC TUBULES [J].
ROBERTSON, DH ;
BRENNER, DW ;
MINTMIRE, JW .
PHYSICAL REVIEW B, 1992, 45 (21) :12592-12595
[39]   AB-INITIO CALCULATIONS OF SIC(110) AND GAAS(110) SURFACES - A COMPARATIVE-STUDY AND THE ROLE OF IONICITY [J].
SABISCH, M ;
KRUGER, P ;
POLLMANN, J .
PHYSICAL REVIEW B, 1995, 51 (19) :13367-13380
[40]   First-principles calculations of beta-SiC(001) surfaces [J].
Sabisch, M ;
Kruger, P ;
Mazur, A ;
Rohlfing, M ;
Pollmann, J .
PHYSICAL REVIEW B, 1996, 53 (19) :13121-13132