Charge injection process in organic field-effect transistors

被引:136
作者
Minari, Takeo
Miyadera, Tetsuhiko
Tsukagoshi, Kazuhito
Aoyagi, Yoshinobu
Ito, Hiromi
机构
[1] RIKEN, Wako, Saitama 3510198, Japan
[2] JST, CREST, Kawasaki, Saitama, Japan
关键词
D O I
10.1063/1.2759987
中图分类号
O59 [应用物理学];
学科分类号
摘要
The charge injection process in top-contact organic field-effect transistors was energetically observed with displacement of the Fermi level as a result of scanning the gate voltage. Doping of charge-transfer molecules into the metal/organic interface resulted in low interface resistance, which unveiled the bulk transport of the injected charges from the contact metal into the channel. The authors found that the bulk transport clearly obeys the Meyer-Neldel rule, according to which the exponential density of states near the band edge limits the charge injection. (C) 2007 American Institute of Physics.
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页数:3
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