Explanation of the limiting thickness observed in low-temperature silicon epitaxy

被引：34

作者：

Thiesen, J ^{[1
]}

Branz, HM ^{[1
]}

Crandall, RS ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 22期

关键词：

D O I：

10.1063/1.1328767

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Solution of the partial differential equation for diffusion of mobile atoms during solid film growth demonstrates that the observed phase transition in low-temperature silicon epitaxy is triggered by supersaturation of the growing layer with hydrogen. The limiting thickness of the epitaxial layer, h(epi), is completely determined by measurable quantities: the flux of hydrogen, the hydrogen diffusion coefficient, and the layer growth rate. Our model accounts for the observed Arrhenius and growth rate dependence of h(epi). (C) 2000 American Institute of Physics. [S0003-6951(00)02348-2].

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页码：3589 / 3591

页数：3

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