The printing conditions for 0.13 μm features in x-ray lithography using Pohang Light Source

被引：5

作者：

Seo, Y

Lee, J

Choi, BK

Kim, H

Kim, O

机构：

[1] POSTECH, Postech Adv Lithog Ctr, Kyungbuk 790784, South Korea

[2] Sunchon Natl Univ, Dept Elect Engn, Chonnam 540742, South Korea

[3] LG Semicon, Adv Tech Lab, Hungduck Gu, Chyungju, Choongbuk, South Korea

来源：

MICROELECTRONIC ENGINEERING | 1998年 / 42卷

关键词：

D O I：

10.1016/S0167-9317(98)00061-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The optimal conditions to print the 0.13 mu m line and space are presented for newly constructed x-ray proximity lithography system at Postech Advanced Lithography Center (PALC). The PALC uses the synchrotron light source which is in Pohang Accelerator Laboratory (PAL). The optimal values of the absorber thickness, the bias-width and the spatial blur of the source are investigated with other conditions such as the mask to wafer gap remaining fixed. As a criterion for the optimal aerial image, we introduce hybrid figure of merit(h-FOM) which combines the dose latitude and contrast of the aerial image.

引用

页码：267 / 270

页数：4

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