Magnetotransport in doped manganate perovskites

被引：29

作者：

Sun, JZ

Krusin-Elbaum, L

Gupta, A

Xiao, G

Duncombe, PR

Parkin, SSP

机构：

[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] Brown Univ, Dept Phys, Providence, RI 02912 USA

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1998年 / 42卷 / 01期

关键词：

D O I：

10.1147/rd.421.0089

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Recent progress in oxide perovskite thin-film technology has led to the discovery of a large negative magnetoresistance at room temperature in doped manganate perovskite thin films. These films may have potentials for magnetic sensing applications. In this paper we review the basic phenomena and physics of magnetotransport in this class of materials. We also discuss our recent demonstration of a large low-field magnetoresistance effect, and the associated challenges that lie ahead.

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页码：89 / 102

页数：14

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