Near ultraviolet optically pumped vertical cavity laser

被引：42

作者：

Zhou, HL ^{[1
]}

Diagne, M

Makarona, E

Nurmikko, AV

Han, J

Waldrip, KE

Figiel, JJ

机构：

[1] Brown Univ, Dept Phys, Providence, RI 02912 USA

[2] Brown Univ, Div Engn, Providence, RI 02912 USA

[3] Sandia Natl Labs, Albuquerque, NM 87111 USA

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 21期

关键词：

D O I：

10.1049/el:20001257

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optically pumped near ultraviolet vertical cavity laser operation (VCSEL) has been obtained under quasi-continuous wave conditions at room temperature near 383nm from shallow InGaN/GaN multiple quantum wells (MQWs). Low loss optical resonators were fabricated by using in-situ grown (Al,Ga)N distributed Bragg reflectors that featured strain engineering design for high optical morphology, in combination with low-loss dielectric multilayer mirrors.

引用

页码：1777 / 1779

页数：3

共 6 条

[1] The effect of H-2 on morphology evolution during GaN metalorganic chemical vapor deposition [J].