Nanometre scale reactive ion etching of GaN epilayers

被引：11

作者：

Coquillat, D

Murad, SK

Ribayrol, A

Smith, CJM

De La Rue, RM

Wilkinson, CDW

Briot, O

Aulombard, RL

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8LT, Lanark, Scotland

[2] Univ Montpellier 2, Etud Semicond Grp, UMR CNRS 5650, F-34095 Montpellier 05, France

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

reactive ion etching; GaN; CH4; Ti; SiNx; CHF3; SiCl4; PMMA;

D O I：

10.4028/www.scientific.net/MSF.264-268.1403

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have demonstrated a process for the fabrication of sub-micron structures using high resolution etching to transfer patterns by masking with a bilayer of Titanium and SiNX. Reactive ion etching (RIE) was performed on GaN epilayers grown on (0001) sapphire by metal organic vapour phase epitaxy (MOVPE). Various chemistries were used to etch GaN including: HBr, SiCl4/HBr, CH4/H-2, NH3/CH4/H-2 and CH4/H-2/O-2 I?Patterns including pillars, holes and gratings with feature: sizes ranging from 200 nm to 1 mu m were produced. In a CH4/H-2 plasma, quasi-vertical etching was achieved with sidewall angles greater than 81 degrees.

引用

收藏

页码：1403 / 1406

页数：4

相关论文

共 11 条

[1] SINGLE-MODE OPERATION OF A SURFACE GRATING DISTRIBUTED-FEEDBACK GAAS-ALGAAS LASER WITH VARIABLE-WIDTH WAVE-GUIDE [J].

ABE, H ;

AYLING, SG ;

MARSH, JH ;

DELARUE, RM ;

ROBERTS, JS .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (05) :452-454

[2] Optimization of the MOVPE growth of GaN on sapphire [J].

Briot, O ;

Alexis, JP ;

Tchounkeu, M ;

Aulombard, RL .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 43 (1-3) :147-153

[3] HIGH-RESOLUTION DRY ETCHING OF ZINC TELLURIDE - CHARACTERIZATION OF ETCHED SURFACES BY X-RAY PHOTOELECTRON-SPECTROSCOPY, PHOTOLUMINESCENCE AND RAMAN-SCATTERING [J].

FOAD, MA ;

WATT, M ;

SMART, AP ;

TORRES, CMS ;

WILKINSON, CDW ;

KUHN, W ;

WAGNER, HP ;

BAUER, S ;

LEIDERER, H ;

GEBHARDT, W .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (9A) :A115-A122

[4] Two-dimensional waveguide based photonic microstructures in GaAs and InP [J].

Krauss, TF ;

Smith, CJM ;

Vogele, B ;

Murad, SK ;

Wilkinson, CDW ;

Grant, RS ;

Burt, MG ;

DeLaRue, RM .

MICROELECTRONIC ENGINEERING, 1997, 35 (1-4) :29-32

[5] Waveguide microcavity based on photonic microstructures [J].

Krauss, TF ;

Vogele, B ;

Stanley, CR ;

DelaRue, RM .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (02) :176-178

[6] Two-dimensional photonic-bandgap structures operating at near infrared wavelengths [J].

Krauss, TF ;

DeLaRue, RM ;

Brand, S .

NATURE, 1996, 383 (6602) :699-702

[7] Reactive ion etching of gallium nitride films [J].

Lee, H ;

Oberman, DB ;

Harris, JS .

JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (05) :835-837

[8] Dry etching of GaN using chemically assisted ion beam etching with HCl and H-2/Cl-2 [J].

Ping, AT ;

Schmitz, AC ;

Khan, MA ;

Adesida, I .

JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (05) :825-829

[9]

Smith C.C., UNPUB

[10] Plasma etching of III-nitrides in ICl/Ar and IBr/Ar plasmas [J].

Vartuli, CB ;

Pearton, SJ ;

Lee, JW ;

Mackenzie, JD ;

Abernathy, CR ;

Shul, RJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (03) :638-642