Bonding origin of optical contrast in phase-change memory materials

被引:205
作者
Huang, B. [1 ]
Robertson, J. [1 ]
机构
[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England
来源
PHYSICAL REVIEW B | 2010年 / 81卷 / 08期
关键词
AMORPHOUS SEMICONDUCTORS; ELECTRONIC-STRUCTURE; CRYSTALLINE; TE; SELENIUM;
D O I
10.1103/PhysRevB.81.081204
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The large optical contrast between crystalline and amorphous phases of phase change memory materials is shown to arise from a large difference in the optical matrix elements. These are enhanced in the crystal by aligned rows of resonantly bonded p orbitals. Amorphous phases have normal-sized matrix elements due to an absence of this order, irrespective of coordination number. This is a more general description of local order differences between the crystalline and amorphous phases, which applies even when coordinations in the amorphous phases exceed the 8-N value.
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页数:4
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