Nature of disorder and localization in amorphous carbon

被引：124

作者：

Chen, CW ^{[1
]}

Robertson, J ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷

关键词：

amorphous carbon; localization; disorder;

D O I：

10.1016/S0022-3093(98)00338-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electronic structure of amorphous diamond-like carbon is studied. Analysis of the participation ratio shows that pi states within the sigma-sigma* gap are localized. The localization arises from dihedral angle disorder. The localization of pi states causes the mobility gap to exceed the optical gap, which accounts for the low carrier mobility and the flat photoluminescence excitation spectrum. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：602 / 606

页数：5

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