Tetrahedrally bonded amorphous carbon (ta-C) thin film transistors

被引：59

作者：

Clough, FJ

Milne, WI

Kleinsorge, B

Robertson, J

Amaratunga, GAJ

Roy, BN

机构：

[1] UNIV CAMBRIDGE,DEPT ENGN,CAMBRIDGE CB2 1PZ,ENGLAND

[2] UNIV LIVERPOOL,DEPT ELECT ENGN & ELECTR,LIVERPOOL L69 3BX,MERSEYSIDE,ENGLAND

[3] UNIV BRUNEI DARUSSALAM,DEPT PHYS,BANDAR SERI BEGAWAN 2028,BRUNEI

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 05期

关键词：

thin film transistors; amorphous semiconductors;

D O I：

10.1049/el:19960288

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors describe a glass compatible, carbon-based, metal-insulator- semiconductor field effect transistor (MISFET). Tetrahedral amorphous carbon (ta-C) is used, for the first time, as the active semiconductor layer in a coplanar thin film transistor (TFT) structure.

引用

页码：498 / 499

页数：2

共 8 条

[1] HIGH-TEMPERATURE THIN-FILM DIAMOND FIELD-EFFECT TRANSISTOR FABRICATED USING A SELECTIVE GROWTH METHOD [J].