RADIATIVE RECOMBINATION IN A-SI1-XCX-H FILMS

被引:74
作者
CHERNYSHOV, SV
TERUKOV, EI
VASSILYEV, VA
VOLKOV, AS
机构
[1] A.F. Ioffe Institute of Physisc and Technology, Leningrad, 194021
关键词
D O I
10.1016/0022-3093(91)90379-K
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Compositional dependence of photoluminescence spectra and its decay, spectra of exitation, as well the temperature quenching of intensity are investigated on a-Si(1-x)Cx:H films grown by glow discharge technique. In the entire range of compositions, the photoluminescence consists of a single nearly symmetrical band, peak energy and halfwidth of which increase with increasing C content from 1.4 and 0.30 eV, respectively, at x = 0 up to 2.3 and 0.7 eV at x approximately equal to 0.4. Above x = 0.5, both the peak energy and halfwidth depend on growth conditions more than on x. For x approximately equal to 0.4, a sharp decrease of temperature and electric field quenching of intensity as well the sharp increase in decay rate occur. These data indicate a change from tunnel to exiton-like recombination. The observation and analysis of an anti-Stokes emission at 'tail-to-tail' exitation together with the above data prompt us to propose a new model for radiative recombination in these films. The model proposed relates the correlation with existence of nanograins in the system which have light-emitting sp2 states. The grains are separated, one from other, by potential barriers at boundaries of phases with wide band gaps.
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页码:218 / 225
页数:8
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