PHYSICS OF AMORPHOUS-SILICON CARBON ALLOYS

被引：408

作者：

BULLOT, J ^{[1
]}

SCHMIDT, MP ^{[1
]}

机构：

[1] ECOLE POLYTECH, PHYS MAT CONDENSEE LAB, F-91128 PALAISEAU, FRANCE

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1987年 / 143卷 / 02期

关键词：

D O I：

10.1002/pssb.2221430202

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：345 / 418

页数：74

共 247 条

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[J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (01): : 17 - 26
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[6] MICROHARDNESS AND OTHER PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON CARBIDE THIN-FILMS FORMED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
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[7] OPTICAL-PARAMETERS OF HYDROGENATED A-SILICON AND ALLOYS NEAR THE GAP
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[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 539 - 542
[8] HYDROGEN EVOLUTION FROM A-SI-C-H AND A-SI-GE-H ALLOYS
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[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 857 - 860
[9] EFFECT OF BORON-DOPING ON THE HYDROGEN EVOLUTION FROM A-SI-H FILMS
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MELL, H
[J]. SOLID STATE COMMUNICATIONS, 1981, 39 (02) : 375 - 379
[10] THE ROLE OF HYDROGEN IN A-SI-H - RESULTS OF EVOLUTION AND ANNEALING STUDIES
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[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 161 - 168

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