PHYSICS OF AMORPHOUS-SILICON CARBON ALLOYS

[31] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) : 77 - &

[32] CODY GD, 1984, SEMICONDUCT SEMIMET, V21, P11

[33] DISORDER AND THE OPTICAL-ABSORPTION EDGE OF HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW LETTERS, 1981, 47 (20) : 1480 - 1483

[34] OPTICAL-ABSORPTION ABOVE THE OPTICAL GAP OF AMORPHOUS-SILICON HYDRIDE [J]. SOLAR ENERGY MATERIALS, 1982, 8 (1-3): : 231 - 240

[35] THE TEMPERATURE-DEPENDENCE OF PHOTO-LUMINESCENCE IN A-SI-H ALLOYS [J]. SOLID STATE COMMUNICATIONS, 1980, 34 (10) : 833 - 836

[36] Cotton F.A., 1972, ADV INORGANIC CHEM

[37] ANALYSIS OF AMORPHOUS-SILICON SOLAR-CELLS [J]. SOLAR CELLS, 1980, 2 (03): : 261 - 273

[38] DESIGN CONSIDERATIONS FOR A-SI SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) : 662 - 670

[39] STATUS OF AMORPHOUS THIN-FILM SOLAR-CELLS [J]. THIN SOLID FILMS, 1984, 119 (01) : 31 - 54

[40] DETERMINATION OF MIDGAP DENSITY OF STATES IN A-SI-H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 451 - 454

[31] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) : 77 - &

[32] CODY GD, 1984, SEMICONDUCT SEMIMET, V21, P11

[33] DISORDER AND THE OPTICAL-ABSORPTION EDGE OF HYDROGENATED AMORPHOUS-SILICON [J]. PHYSICAL REVIEW LETTERS, 1981, 47 (20) : 1480 - 1483

[34] OPTICAL-ABSORPTION ABOVE THE OPTICAL GAP OF AMORPHOUS-SILICON HYDRIDE [J]. SOLAR ENERGY MATERIALS, 1982, 8 (1-3): : 231 - 240

[35] THE TEMPERATURE-DEPENDENCE OF PHOTO-LUMINESCENCE IN A-SI-H ALLOYS [J]. SOLID STATE COMMUNICATIONS, 1980, 34 (10) : 833 - 836

[36] Cotton F.A., 1972, ADV INORGANIC CHEM

[37] ANALYSIS OF AMORPHOUS-SILICON SOLAR-CELLS [J]. SOLAR CELLS, 1980, 2 (03): : 261 - 273

[38] DESIGN CONSIDERATIONS FOR A-SI SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) : 662 - 670

[39] STATUS OF AMORPHOUS THIN-FILM SOLAR-CELLS [J]. THIN SOLID FILMS, 1984, 119 (01) : 31 - 54

[40] DETERMINATION OF MIDGAP DENSITY OF STATES IN A-SI-H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 451 - 454