Low-temperature processing of ferroelectric thin films compatible with silicon integrated circuit technology

被引：87

作者：

Calzada, ML

Bretos, I

Jiménez, R

Guillon, H

Pardo, L

机构：

[1] CSIC, ICMM, E-28049 Madrid, Spain

[2] JIPELEC Div, Qualiflow, F-34935 Montpellier 9, France

来源：

ADVANCED MATERIALS | 2004年 / 16卷 / 18期

关键词：

D O I：

10.1002/adma.200306401

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ferroelectric thin films have been fabricated at 723 K by UV-assisted rapid thermal sol-gel processing (see Figure). Films were deposited from inherently photosensitive sol-gel solutions. The low processing temperature makes the integration of these films with silicon semiconductor technology possible.

引用

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页码：1620 / +

页数：6

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