Ferromagnetic semiconductor heterostructures based on (GaMn)As

被引：23

作者：

Tanaka, M

Shimizu, H

Hayashi, T

Shimada, H

Ando, K

机构：

[1] Univ Tokyo, Grad Sch Engn, Dept Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan

[2] Univ Tokyo, Cryogen Ctr, Bunkyo Ku, Tokyo 1130032, Japan

[3] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

[4] Japan Sci & Technol Corp, CREST, Kawaguchi 3320012, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2000年 / 18卷 / 04期

关键词：

D O I：

10.1116/1.582334

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Growth, transport, magnetic, magneto-optical, and magnetotunneling properties of ferromagnetic semiconductor (GaMn)As and its quantum heterostructures, including superlattices and tunnel junctions, are presented. Spin-related phenomena in such III-V based ferromagnetic quantum heterostructures are shown to give a new degree of freedom in the band-gap engineering and wave function engineering for semiconductor electronics and photonics. (C) 2000 American Vacuum Society. [S0734-2101(00)13004-0].

引用

收藏

页码：1247 / 1253

页数：7

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