Chemical Vapor Deposition Synthesis of N-, P-, and Si-Doped Single-Walled Carbon Nanotubes

被引:102
作者
Campos-Delgado, Jessica [7 ]
Maciel, Indhira O. [6 ]
Cullen, David A. [4 ,5 ]
Smith, David J. [4 ,5 ]
Jorio, Ado [3 ,6 ]
Pimenta, Marcos A. [3 ]
Terrones, Humberto [1 ]
Terrones, Mauricio [1 ,2 ]
机构
[1] SOMENANO, Sociedad Mexicana Nanociencias & Nanotecnol, San Luis Potosi 78216, Mexico
[2] Univ Iberoamer, Div Sci Arts & Technol, Dept Math & Phys, Santa Fe 012100, DF, Mexico
[3] Univ Fed Minas Gerais, Dept Fis, BR-31270901 Belo Horizonte, MG, Brazil
[4] Arizona State Univ, Sch Mat, Tempe, AZ 85287 USA
[5] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA
[6] Normalizacao & Qualidade Ind INMETRO, Inst Nacl Metrol, Div Mat Metrol, BR-25250020 Duque De Caxias, RJ, Brazil
[7] IPICYT, Adv Mat Dept, San Luis Potosi 78216, Mexico
关键词
SWNTs; doping; phosphorus; silicon; nitrogen; RAMAN-SPECTROSCOPY; LONG STRANDS; NITROGEN; SCATTERING; GROWTH;
D O I
10.1021/nn901599g
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Here we report the synthesis of single-walled carbon nanotube bundles by chemical vapor deposition in the presence of electron donor elements (N, P, and Si). In order to introduce each dopant into the graphitic carbon lattice, different precursors containing the doping elements (benzylamine, pyrazine, triphenylphosphine, and methoxytrimethylsilane) were added at various concentrations into ethanol/ferrocene solutions. The synthesized nanotubes and byproduct were characterized by electron microscopy and Raman spectroscopy. Our results reveal intrinsic structural and electronic differences for the N-, P-, and Si- doped nanotubes. These tubes can now be tested for the fabrication of electronic nanodevices, and their performance can be observed.
引用
收藏
页码:1696 / 1702
页数:7
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