Photoluminescence investigation of carbon nitride-based films deposited by reactive sputtering

被引：26

作者：

Fanchini, G

Ray, SC

Tagliaferro, A

机构：

[1] Politecn Torino, INFM, Dipartimento Fis, I-10129 Turin, Italy

[2] Politecn Torino, INFM, Unita INFM, I-10129 Turin, Italy

来源：

DIAMOND AND RELATED MATERIALS | 2003年 / 12卷 / 3-7期

关键词：

carbon nitride; sputtering; electronic states; optical properties;

D O I：

10.1016/S0925-9635(02)00269-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the present work, we investigate the photoluntinescence (PL) of two structurally different sets of amorphous carbon nitride thin films labelled as 'B'-bubbly and 'C'-compact types. PL was studied at room temperature, both before and after laser soaking, with special emphasis on the role of lone-pair electrons and hydroxyl adsorbates. The film stability under irradiation and the structural modifications induced by light-soaking are investigated. The increase and subsequent saturation of the PL intensity under irradiation is approximately described by an exponential law. (C) 2002 Elsevier Science B.V. All rights reserved.

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页码：1084 / 1087

页数：4

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