Efficient light management scheme for thin film silicon solar cells via transparent random nanostructures fabricated by nanoimprinting

被引:59
作者
Battaglia, Corsin [1 ]
Soederstroem, Karin [1 ]
Escarre, Jordi [1 ]
Haug, Franz-Josef [1 ]
Domine, Didier [1 ]
Cuony, Peter [1 ]
Boccard, Mathieu [1 ]
Bugnon, Gregory [1 ]
Denizot, Celine [1 ]
Despeisse, Matthieu [1 ]
Feltrin, Andrea [1 ]
Ballif, Christophe [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Inst Microengn IMT, Photovolta & Thin Film Elect Lab, CH-2000 Neuchatel, Switzerland
关键词
current density; electrochemical electrodes; elemental semiconductors; hydrogen; II-VI semiconductors; nanoelectromechanical devices; nanolithography; nanostructured materials; p-i-n diodes; semiconductor thin films; short-circuit currents; silicon; solar cells; wide band gap semiconductors; zinc compounds; SURFACE-MORPHOLOGY;
D O I
10.1063/1.3432739
中图分类号
O59 [应用物理学];
学科分类号
摘要
We propose the use of transparent replicated random nanostructures fabricated via nanoimprinting on glass as next-generation superstrates for thin film silicon solar cells. We validate our approach by demonstrating short-circuit current densities for p-i-n hydrogenated microcrystalline silicon solar cells as high as for state-of-the-art nanotextured ZnO front electrodes. Our methodology opens exciting possibilities to integrate a large variety of nanostructures into p-i-n solar cells and allows to systematically investigate the influence of interface morphology on the optical and electronic properties of the device in order to further improve device performance. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3432739]
引用
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页数:3
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