Solution-Processed Zinc Oxide Thin Film as a Buffer Layer for Polymer Solar Cells with an Inverted Device Structure

被引：199

作者：

Yang, Tingbin ^{[1
]}

Cai, Wanzhu ^{[1
]}

Qin, Donghuan ^{[1
]}

Wang, Ergang ^{[1
]}

Lan, Linfeng ^{[1
]}

Gong, Xiong ^{[1
]}

Peng, Junbiao ^{[1
]}

Cao, Yong ^{[1
]}

机构：

[1] S China Univ Technol, Inst Polymer Optoelect Mat & Devices, Key Lab Special Funct Mat, Minist Educ, Guangzhou 510640, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2010年 / 114卷 / 14期

基金：

美国国家科学基金会;

关键词：

INDIUM-TIN-OXIDE; PHOTOVOLTAIC CELLS; STABILITY; NETWORK;

D O I：

10.1021/jp1003984

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A solution-processed zinc oxide (ZnO) thin film as a buffer layer for polymer solar cells (PSCs) with an inverted device structure has been demonstrated. A power conversion efficiency (PCE) of 3 8% was observed from an inverted device structure with the ZnO buffer layer Without the ZnO PSCs only show a ICE of 1 67%. which is less than hall the value observed from PSCs with the ZnO buffer layer When operated at room temperature. no obvious degradation was observed from the PSCs with the ZnO layer after continuously illuminating the devices for 4 h. However, a significant degradation was observed from the PSCs without the ZnO buffer layer after illuminating the devices only for 1 h. Furthermore, PSCs with the ZnO buffer layer also show very good shelf stability, only 5% degradation was observed in PCEs after 47 days. All these results demonstrate that the ZnO buffer layer plays an important role in the enhancement of PSCs' performance with an inverted device structure

引用

页码：6849 / 6853

页数：5

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