Anomalous electrical properties of dislocation slip plane in Si

被引：26

作者：

Eremenko, VG ^{[1
]}

Yakimov, EB ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Moscow District, Russia

来源：

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2004年 / 27卷 / 1-3期

关键词：

D O I：

10.1051/epjap:2004149

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The anomalous bright contrast in the specimens containing dense dislocation slip planes, swept by moving dislocations was analysed. It is shown that the bright EBIC contrast outside the Schottky barrier is related to electrical activity of the extended defects generated in the slip plane by moving dislocations and thus, the slip plane acts as extended barrier separating excess carriers.

引用

页码：349 / 351

页数：3

共 10 条

[1] EBIC MICROSCOPY APPLIED TO GLIDE DISLOCATIONS [J].

ALEXANDER, H ;

DIETRICH, S ;

HUHNE, M ;

KOLBE, M ;

WEBER, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 117 (02) :417-428

[2]

BLUMTRITT H, 1989, I PHYS C SER, V104, P233

[3] RECOMBINATION PROPERTIES OF DISLOCATION SLIP PLANES [J].

BONDARENKO, IE ;

BLUMTRITT, H ;

HEYDENREICH, J ;

KAZMIRUK, VV ;

YAKIMOV, EB .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 95 (01) :173-177

[4] ON THE REAL STRUCTURE OF MONOCRYSTALLINE SILICON NEAR DISLOCATION SLIP PLANES [J].

BONDARENKO, IE ;

EREMENKO, VG ;

FARBER, BY ;

NIKITENKO, VI ;

YAKIMOV, EB .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 68 (01) :53-60

[5]

Eremenko V, 1999, PHYS STATUS SOLIDI A, V171, P383, DOI 10.1002/(SICI)1521-396X(199901)171:1<383::AID-PSSA383>3.0.CO

[6]

2-M

[7]

Eremenko V., 1997, I PHYS C SER, V160, P269

[8]

KISIELOWSKIKEMM.C, 1985, J ELECTRONIC MATER A, V14, P387

[9]

NEGRII VD, 1982, FIZ TVERD TELA+, V24, P344

[10]

NIKITENKO VI, 1981, ZH EXPER TEOR FIZ PI, V34, P245

← 1 →