RECOMBINATION PROPERTIES OF DISLOCATION SLIP PLANES

被引：25

作者：

BONDARENKO, IE ^{[1
]}

BLUMTRITT, H ^{[1
]}

HEYDENREICH, J ^{[1
]}

KAZMIRUK, VV ^{[1
]}

YAKIMOV, EB ^{[1
]}

机构：

[1] ACAD SCI GDR,INST SOLID STATE PHYS & ELECTRON MICROSCOPY,DDR-4010 HALLE,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 95卷 / 01期

关键词：

D O I：

10.1002/pssa.2210950121

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：173 / 177

页数：5

共 10 条

[1] THE EBIC CONTRAST OF DISLOCATION SLIP PLANES IN SILICON [J].

ARISTOV, VV ;

BONDARENKO, IE ;

DRYOMOVA, NN ;

KAZMIRUK, VV ;

YAKIMOV, EB .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 84 (01) :K43-&

[2] ON THE REAL STRUCTURE OF MONOCRYSTALLINE SILICON NEAR DISLOCATION SLIP PLANES [J].

BONDARENKO, IE ;

EREMENKO, VG ;

FARBER, BY ;

NIKITENKO, VI ;

YAKIMOV, EB .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 68 (01) :53-60

[3]

BONDARENKO IE, 1976, DOKL AKAD NAUK SSSR+, V229, P1087

[4] AN ANALYTICAL MODEL OF SEM AND STEM CHARGE COLLECTION IMAGES OF DISLOCATIONS IN THIN SEMICONDUCTOR LAYERS .1. MINORITY-CARRIER GENERATION, DIFFUSION, AND COLLECTION [J].

DONOLATO, C .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 65 (02) :649-658

[5] THEORY OF BEAM INDUCED CURRENT CHARACTERIZATION OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SOLAR-CELLS [J].

DONOLATO, C .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1314-1322

[6]

Erofeev V. N., 1971, Kristallografiya, V16, P190

[7]

NEGRII VD, 1982, FIZ TVERD TELA+, V24, P344

[8]

Nikitenko V. I., 1981, Pis'ma v Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V34, P245

[9] DEMONSTRATION OF EXCITATION-DEPENDENT GRAIN-BOUNDARY RECOMBINATION VELOCITY IN POLYCRYSTALLINE SILICON [J].

SUNDARESAN, R ;

FOSSUM, JG ;

BURK, DE .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) :964-970

[10]

VYVENKO OV, 1984, 4 VSES SOV DEF STRUK, P70

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