THE EBIC CONTRAST OF DISLOCATION SLIP PLANES IN SILICON

被引：4

作者：

ARISTOV, VV

BONDARENKO, IE

DRYOMOVA, NN

KAZMIRUK, VV

YAKIMOV, EB

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 84卷 / 01期

关键词：

D O I：

10.1002/pssa.2210840154

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K43 / &

共 10 条

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[6] ON THE CHARACTERIZATION OF ELECTRICALLY ACTIVE INHOMOGENEITIES IN SEMICONDUCTOR SILICON BY CHARGE COLLECTION AT SCHOTTKY BARRIERS USING THE SEM-EBIC(II) - CONTRAST DUE TO DEFECTS [J].

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[7] ON THE INTERACTION BETWEEN CRYSTAL DEFECTS AND IMPURITIES IN SILICON INVESTIGATED BY ELECTRON-MICROSCOPIC METHODS [J].

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