Nondestructive depth-resolved spectroscopic investigation of the heavily intermixed In2S3/Cu(In,Ga)Se2 interface

被引：19

作者：

Baer, M. ^{[1
,4
]}

Barreau, N. ^{[5
]}

Couzinie-Devy, F. ^{[5
]}

Pookpanratana, S. ^{[4
]}

Klaer, J. ^{[1
]}

Blum, M. ^{[3
,4
]}

Zhang, Y. ^{[4
]}

Yang, W. ^{[2
]}

Denlinger, J. D. ^{[2
]}

Schock, H. -W. ^{[1
]}

Weinhardt, L. ^{[3
]}

Kessler, J. ^{[5
]}

Heske, C. ^{[4
]}

机构：

[1] Mat & Energie GmbH, Helmholtz Zentrum Berlin, D-14109 Berlin, Germany

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source ALS, Berkeley, CA 94720 USA

[3] Univ Wurzburg, D-97074 Wurzburg, Germany

[4] Univ Nevada, Dept Chem, Las Vegas, NV 89154 USA

[5] Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, UMR 6502, F-44322 Nantes 3, France

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 18期

关键词：

FILM SOLAR-CELLS; SULFIDE BUFFER LAYERS; IN2S3; DEPOSITION; ALCVD; PVD; CU;

D O I：

10.1063/1.3425739

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The chemical structure of the interface between a nominal In2S3 buffer and a Cu(In,Ga)Se-2 (CIGSe) thin-film solar cell absorber was investigated by soft x-ray photoelectron and emission spectroscopy. We find a heavily intermixed, complex interface structure, in which Cu diffuses into (and Na through) the buffer layer, while the CIGSe absorber surface/interface region is partially sulfurized. Based on our spectroscopic analysis, a comprehensive picture of the chemical interface structure is proposed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3425739]

引用

页数：3

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