Deposition of In2S3 on Cu(In,Ga)(S,Se)2 thin film solar cell absorbers by spray ion layer gas reaction:: Evidence of strong interfacial diffusion

被引：24

作者：

Baer, M.

Allsop, N.

Lauermann, I.

Fischer, Ch. -H.

机构：

[1] Univ Nevada, Dept Chem, Las Vegas, NV 89154 USA

[2] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany

[3] Free Univ Berlin, D-14195 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 13期

关键词：

SULFIDE BUFFER LAYERS; CHALCOPYRITE; PVD;

D O I：

10.1063/1.2717534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recently, Cd-free Cu(In,Ga)(S,Se)(2)-based "CIGSSe" thin film solar cells with a nominal In2S3 buffer layer deposited by the spray ion layer gas reaction technique resulted in photovoltaic performances comparable to that of CdS buffered references. In the past it was argued that diffusion processes across the In2S3/CIGSSe interface play a significant role for the device quality. Investigating the interface formation by using x-ray photoelectron spectroscopy, the authors were able to confirm a strong interfacial diffusion involving Cu and Na from the CIGSSe. (c) 2007 American Institute of Physics.

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页数：3

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