Artificially nanostructured Cu: Al2O3 films produced by pulsed laser deposition

被引：25

作者：

Serna, R

Afonso, CN

Ricolleau, C

Wang, Y

Zheng, Y

Gandais, M

Vickridge, I

机构：

[1] CSIC, Inst Opt, E-28006 Madrid, Spain

[2] Univ Paris 06, CNRS UMR 7590, Lab Mineral Cristallog, F-75252 Paris 5, France

[3] Univ Paris 07, CNRS UMR 7590, Lab Mineral Cristallog, F-75252 Paris 5, France

[4] Univ Paris 06, UMR 7588, Grp Phys Solides, F-75251 Paris 5, France

[5] Univ Paris 07, UMR 7588, Grp Phys Solides, F-75251 Paris 5, France

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2000年 / 71卷 / 05期

关键词：

D O I：

10.1007/s003390000619

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The processes leading to the formation of Cu:Al2O3 composite films on Si (001) with a well defined nanostructure by alternate pulsed laser deposition (a-PLD) in vacuum are investigated. Alternately amorphous Al2O3 layers and Cu nanocrystals nucleated on the Al2O3 surface are formed, according to the PLD sequence. The Al2O3 deposited on the Cu nanocrystals fills in the space between them until they are completely buried, and subsequently, a continuous dense layer with a very flat surface (within 1 nm) is developed. The nucleation process of the nanocrystals and their resulting oblate ellipsoidal shape are discussed in terms of the role of the energetic species involved in the PLD process and the metal-oxide interface energy.

引用

页码：583 / 586

页数：4

共 30 条

[1] Pulsed laser deposition of Cu:Al2O3 nanocrystal thin films with high third-order optical susceptibility [J].