Improved photoluminescence properties of oxidized anodically etched porous Zn

被引：13

作者：

Chang, SS ^{[1
]}

Park, CH ^{[1
]}

Park, SW ^{[1
]}

机构：

[1] Kangnung Natl Univ, Dept Ceram Engn, Kangwon Do 210702, Kangnung, South Korea

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2003年 / 79卷 / 01期

关键词：

ultraviolet emission; photoluminescence; ZnO; oxidation;

D O I：

10.1016/S0254-0584(02)00307-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The intent of this paper is to study the preparation of improved photolummescence (PL) properties from zinc oxide (ZnO) using a combination of anodic etching of Zn and subsequent annealing at various temperatures. PL spectra measurements and scanning electron micrographs (SEM) are taken on these samples. It is found that ambient air annealing of porous Zn (p-Zn) at 380 degreesC yields efficient UV luminescence with a very weak deep-level defect-related luminescence. Low-temperature PL measurements on these ambient air annealed p-Zn reveal three excitonic emission peaks similar to high quality ZnO. The anodically etched p-Zn oxidizes four times faster than the reference polished Zn. These results strongly suggest that high quality ZnO can be formed by a simple ambient air annealing, due to enhanced oxidation from a larger surface area, which is created by an anodic etching of Zn. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：9 / 14

页数：6

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