First-principles calculations of pressure-induced phase transformation in AlN and GaN

被引:56
作者
Xiao, H. Y. [1 ]
Jiang, X. D. [2 ]
Duan, G. [1 ]
Gao, Fei [3 ]
Zu, X. T. [1 ]
Weber, W. J. [3 ]
机构
[1] Univ Elect Sci & Technol China, Dept Appl Phys, Chengdu 610054, Peoples R China
[2] China Acad Engn Phys, Res Ctr Laser Fus, Mianyang 621900, Peoples R China
[3] Pacific NW Natl Lab, Richland, WA 99352 USA
关键词
Gallium nitride; Aluminum nitride; First-principles calculation; Pressure; Phase transformation; ROCK-SALT PHASE; GALLIUM NITRIDE; ALUMINUM NITRIDE; BAND-STRUCTURES; OPTICAL-PROPERTIES; AB-INITIO; WURTZITE GAN; III-NITRIDES; DIELECTRIC-PROPERTIES; CUBIC GAN;
D O I
10.1016/j.commatsci.2010.03.028
中图分类号
T [工业技术];
学科分类号
120111 [工业工程];
摘要
Ab initio total energy calculations have been carried out to study pressure-induced wurtzite and zinc-blende to rocksalt phase transformation in AlN and GaN. The effects of d electrons on the phase transition pressure and pressure coefficients of band gap have been studied. It is shown that the presence of Ga 3d electrons do have a certain effect on the transition pressure, while other factors such as the variation of charge distribution with pressure should also be considered to explain the higher phase transition pressure for GaN than AlN. Our calculations also show that Ga 3d electrons affect the pressure coefficients of band gap slightly. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:768 / 772
页数:5
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