Chemical and electronic properties of sulfur-passivated InAs surfaces

被引：115

作者：

Petrovykh, DY

Yang, MJ

Whitman, LJ

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] Univ Maryland, Dept Phys, College Pk, MD 20742 USA

来源：

SURFACE SCIENCE | 2003年 / 523卷 / 03期

关键词：

X-ray photoelectron spectroscopy; surface electrical transport (surface conductivity; surface recombination; etc.); surface electronic phenomena (work function; surface potential; surface states; etching; oxidation; indium arsenide; sulphides;

D O I：

10.1016/S0039-6028(02)02411-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Treatment with ammonium sulfide ((NH4)(2)S-x) Solutions is used to produce model passivated InAs(001) surfaces with well-defined chemical and electronic properties. The passivation effectively removes oxides and contaminants, with minimal surface etching, and creates a covalently bonded sulfur layer with good short-term stability in ambient air and a variety of aqueous solutions, as characterized by X-ray photoelectron spectroscopy, atomic force microscopy, and Hall measurements. The sulfur passivation also preserves the surface charge accumulation layer, increasing the associated downward band bending. (C) 2002 Elsevier Science B.V. All rights reserved.

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页码：231 / 240

页数：10

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