Shock-induced localized amorphization in boron carbide

被引:469
作者
Chen, MW
McCauley, JW
Hemker, KJ [1 ]
机构
[1] Johns Hopkins Univ, Dept Mech Engn, Baltimore, MD 21218 USA
[2] USA, Res Lab, Aberdeen Proving Ground, MD 21005 USA
关键词
D O I
10.1126/science.1080819
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
High-resolution electron microscope observations of shock-loaded boron carbide have revealed the formation of nanoscale intragranular amorphous bands that occur parallel to specific crystallographic planes and contiguously with apparent cleaved fracture surfaces. This damage mechanism explains the measured, but not previously understood, decrease in the ballistic performance of boron carbide at high impact rates and pressures. The formation of these amorphous bands is also an example of how shock loading can result in the synthesis of novel structures and materials with substantially altered properties.
引用
收藏
页码:1563 / 1566
页数:4
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