The effects of growth conditions in dislocation density in SiC epi-layers produced by the sublimation epitaxy technique

被引：9

作者：

Kakanakova-Georgieva, A ^{[1
]}

MacMillan, MF

Nishino, S

Yakimova, R

Janzen, E

机构：

[1] Univ Sofia, Fac Phys, BG-1126 Sofia, Bulgaria

[2] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[3] Kyoto Inst Technol, Dept Elect & Informat Sci, Sakyo Ku, Kyoto 606, Japan

[4] Outokumpu Semitron AB, S-17824 Ekero, Sweden

来源：

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷

关键词：

sublimation epitaxy growth; surface morphology; dislocations;

D O I：

10.4028/www.scientific.net/MSF.264-268.147

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we compare the surface morphological properties of 6H-SiC epi-layers grown by the Sublimation Epitaxy Technique under different growth conditions. The growth time and growth rate were varied in two series of growth runs and the influence of these parameters on the epi-layers' morphology and density of dislocations intersecting the growth plane was examined.

引用

页码：147 / 150

页数：4

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