Measurement of interface trap states in metal-ferroelectric-silicon heterostructures

被引：49

作者：

Alexe, M ^{[1
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 18期

关键词：

D O I：

10.1063/1.121337

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Interface trap density distributions within Si for metal-bismuth titanate-silicon capacitors fabricated by chemical solution deposition were investigated. The interface trap density was measured by a conductance technique at room temperature and a value in the order of 10(11)-10(12) eV(-1) cm(-2) was found depending on the ferroelectric crystallization temperature. An increase in the annealing temperature results in an increase in the interface trap density. (C) 1998 American Institute of Physics.

引用

页码：2283 / 2285

页数：3

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