A note on the Hall mobility and carrier concentration in pyrite thin films

被引：22

作者：

Ferrer, IJ ^{[1
]}

Ares, JR ^{[1
]}

Sánchez, CR ^{[1
]}

机构：

[1] UAM, Dept Fis Mat, C IV, Madrid 28049, Spain

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2003年 / 76卷 / 02期

关键词：

pyrite; thin films; solar cells;

D O I：

10.1016/S0927-0248(02)00344-6

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This note presents results on Hall effect characteristics (mobility and density of majority charge carriers) of undoped p-type and n-doped pyrite thin films. Carrier mobilities between 200 and 0.07 cm(2)/V s have been measured in undoped p-type films. Doped n-type films present values which vary from 200 to 0.1 cm(2)/V s. The corresponding carrier densities change from 2 x 10(18) to 10(22) cm(-3) in p-type films and from 6 x 10(17) to 10(21) cm(-3) in n-type films. These results reinforce the physical basis and conclusions of the modelling of pyrite solar cells accomplished by Altermatt et at. (Sol. Energy Mater. Sol. Cells 71 (2002) 181). (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：183 / 188

页数：6

共 12 条

[1] Specifying targets of future research in photovoltaic devices containing pyrite (FeS2) by numerical modelling [J].