Epitaxial NiMnSb films on GaAs(001)

被引：83

作者：

Van Roy, W ^{[1
]}

De Boeck, J ^{[1
]}

Brijs, B ^{[1
]}

Borghs, G ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 25期

关键词：

D O I：

10.1063/1.1334356

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show the growth of epitaxial NiMnSb(001) thin films, a half-metallic ferromagnet, on GaAs(001) by molecular-beam epitaxy. The Sb content of the films strongly depends on the Sb flux. Sb-deficient films show a reduced magnetization and the formation of a Mn2As interface layer. Stoichiometric films exhibit the bulk lattice constant, have a saturation magnetization close to the bulk value, and do not suffer from Mn2As formation at the interface. They show in-plane uniaxial anisotropy with nearly square hysteresis loops along the easy axis, which points either along [110] or [1 (1) over bar0] depending on the growth conditions. (C) 2000 American Institute of Physics. [S0003-6951(00)01652-1].

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页码：4190 / 4192

页数：3

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