Room temperature enhancement and inhibition of spontaneous emission in semiconductor microcavities

被引：18

作者：

Bourdon, G ^{[1
]}

Robert, I ^{[1
]}

Adams, R ^{[1
]}

Nelep, K ^{[1
]}

Sagnes, I ^{[1
]}

Moison, JM ^{[1
]}

Abram, I ^{[1
]}

机构：

[1] Ctr Natl Etud Telecommun, CNRS, Lab CDP, F-92220 Bagneux, France

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 09期

关键词：

D O I：

10.1063/1.1290144

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated planar semiconductor microcavities with metallic mirrors in which we have observed both enhancement and inhibition of spontaneous emission, at room temperature. Our results are quantitatively accounted for by modeling the band-to-band emission as arising from point dipoles. Observation of these cavity quantum electrodynamics effects in room temperature semiconductor structures opens the way to optoelectronic devices with controlled spontaneous emission. (C) 2000 American Institute of Physics. [S0003-6951(00)03835-3].

引用

页码：1345 / 1347

页数：3

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