Molecular volume and electronic and vibrational polarizibilities for amorphous LaAlO3

被引:19
作者
Busani, T [1 ]
Devine, RAB
机构
[1] USAF, Res Lab, Space Vehicles Directorate, Kirtland AFB, NM 87117 USA
[2] CNRS, Lab Electrostat & Mat Dielect, F-38042 Grenoble, France
关键词
D O I
10.1063/1.1808905
中图分类号
O59 [应用物理学];
学科分类号
摘要
Grazing incidence x-ray reflectivity measurements are used to determine the density of sputter-deposited LaAlO3 and anodized LaAl films. Together with refractive index and dielectric constant measurements, it is demonstrated that a coherent picture emerges explaining the low dielectric constant of the amorphous films (similar to13) as compared to the single-crystal value (similar to26). The importance of molecular volume dependence of the electronic and vibrational molecular polarizabilities is underlined. (C) 2004 American Institute of Physics.
引用
收藏
页码:6642 / 6647
页数:6
相关论文
共 25 条
[1]  
BUNGET I, 1984, PHYS SOLID DIELECTRI, P209
[2]   DISTRIBUTED ELECTRON-CYCLOTRON RESONANCE IN SILICON PROCESSING - EPITAXY AND ETCHING [J].
BURKE, RR ;
PELLETIER, J ;
POMOT, C ;
VALLIER, L .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03) :2931-2938
[3]  
Busani T, 2004, MATER RES SOC SYMP P, V786, P189
[4]   Thermal expansion of LaAlO3 and (La,Sr)(Al,Ta)O3, substrate materials for superconducting thin-film device applications [J].
Chakoumakos, BC ;
Schlom, DG ;
Urbanik, M ;
Luine, J .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (04) :1979-1982
[5]   Infrared and electrical properties of amorphous sputtered (LaxAl1-x)2O3 films [J].
Devine, RAB .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (12) :9938-9942
[6]  
Gibaud A, 2000, CURR SCI INDIA, V78, P1467
[7]   Open resonator mode patterns for characterization of anisotropic dielectric substrates for HTS thin films [J].
Harrington, TE ;
Wosik, J ;
Long, SA .
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 1997, 7 (02) :1861-1864
[8]   A nuclear magnetic resonance study of amorphous and crystalline lanthanum-aluminates [J].
Iuga, D ;
Simon, S ;
de Boer, E ;
Kentgens, APM .
JOURNAL OF PHYSICAL CHEMISTRY B, 1999, 103 (36) :7591-7598
[9]   Characteristics of LaAlO3 as insulating buffer layers of ferroelectric-gate field effect transistors [J].
Kang, SK ;
Ishiwara, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (11B) :6899-6903
[10]   Role of bond coordination and molecular volume on the dielectric constant of mixed-oxide compounds [J].
Kurtz, HA ;
Devine, RAB .
APPLIED PHYSICS LETTERS, 2001, 79 (15) :2342-2344