Capacitance of atomic junctions

被引:70
作者
Wang, J
Guo, H
Mozos, JL
Wan, CC
Taraschi, G
Zheng, QR
机构
[1] Univ Hong Kong, Dept Phys, Hong Kong, Peoples R China
[2] McGill Univ, Dept Phys, Montreal, PQ H3A 2T8, Canada
[3] McGill Univ, Ctr Phys Mat, Montreal, PQ H3A 2T8, Canada
[4] Helsinki Univ Technol, Phys Lab, FIN-02150 Espoo, Finland
关键词
D O I
10.1103/PhysRevLett.80.4277
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report the behavior of the electrochemical capacitance for a variety of atomic junctions using nb initio methods. The capacitance can be classified according to the nature of conductance and shows a remarkable crossover from a quantum dominated regime to that of a classical-like geometric behavior. Clear anomalies arise due to a finite density of states of the atomic junction as well as the role played by the atomic valence orbitals. The results suggest several experiments to study contributions due to quantum effects and the atomic degree of freedom.
引用
收藏
页码:4277 / 4280
页数:4
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