Self-limiting process for the bismuth content in molecular beam epitaxial growth of Bi2Sr2CuOy thin films

被引：36

作者：

Migita, S ^{[1
]}

Kasai, Y ^{[1
]}

Ota, H ^{[1
]}

Sakai, S ^{[1
]}

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 305, Japan

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 25期

关键词：

D O I：

10.1063/1.120490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new technology utilizing a self-limiting mechanism for the Bi content is demonstrated for Bi2Sr2CuOy (2201) thin film growth by an atomic layer controlled molecular beam epitaxy. This technology is based on peculiar behavior of the Bi sticking coefficient that depends on the kinds of oxide thin films to be grown. When Bi atoms are supplied in excess with ozone molecular beam, only Bi atoms. being necessary for forming the structural unit (2201 half unit cell), an just incorporated in the film. Surplus Bi is reevaporated from the surface, Using this technique, high quality 2201 thin films an obtained with good reproducibility. (C) 1997 American Institute of Physics. [S0003-6951(97)04051-5].

引用

收藏

页码：3712 / 3714

页数：3

相关论文

共 9 条

[1] SUPERCONDUCTIVITY IN THE BI-SR-CU-O SYSTEM [J].

AKIMITSU, J ;

YAMAZAKI, A ;

SAWA, H ;

FUJIKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (12) :L2080-L2081

[2] MOLECULAR-BEAM EPITAXY FABRICATION OF SRTIO3 AND BI2SR2CACU2O8 HETEROSTRUCTURES USING A NOVEL REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION MONITORING TECHNIQUE [J].

BODIN, P ;

SAKAI, S ;

KASAI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (7B) :L949-L952

[3] EVALUATION OF NEW OZONE GENERATOR DESIGNED FOR OXIDE FILM FORMATION BY MOLECULAR-BEAM EPITAXY METHOD [J].

ICHIMURA, S ;

HOSOKAWA, S ;

NONAKA, H ;

ARAI, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (04) :2369-2373

[4] Atomic absorption spectroscopy system for flux monitoring and atomic-layer control of molecular beam epitaxial growth of BiSrCaCuO [J].

Kasai, Y ;

Sakai, S .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1997, 68 (07) :2850-2855

[5] ATOMIC CONTROL OF THE SRTIO3 CRYSTAL-SURFACE [J].

KAWASAKI, M ;

TAKAHASHI, K ;

MAEDA, T ;

TSUCHIYA, R ;

SHINOHARA, M ;

ISHIYAMA, O ;

YONEZAWA, T ;

YOSHIMOTO, M ;

KOINUMA, H .

SCIENCE, 1994, 266 (5190) :1540-1542

[6] ACCURATE MEASUREMENT OF ATOMIC-BEAM FLUX BY PSEUDO-DOUBLE-BEAM ATOMIC-ABSORPTION SPECTROSCOPY FOR GROWTH OF THIN-FILM OXIDE SUPERCONDUCTORS [J].

KLAUSMEIERBROWN, ME ;

ECKSTEIN, JN ;

BOZOVIC, I ;

VIRSHUP, GF .

APPLIED PHYSICS LETTERS, 1992, 60 (05) :657-659

[7] INTRINSIC JOSEPHSON EFFECTS IN BI2SR2CACU2O8 SINGLE-CRYSTALS [J].

KLEINER, R ;

STEINMEYER, F ;

KUNKEL, G ;

MULLER, P .

PHYSICAL REVIEW LETTERS, 1992, 68 (15) :2394-2397

[8] A NEW HIGH-TC OXIDE SUPERCONDUCTOR WITHOUT A RARE-EARTH ELEMENT [J].

MAEDA, H ;

TANAKA, Y ;

FUKUTOMI, M ;

ASANO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (02) :L209-L210

[9] FLUXONS IN THIN-FILM SUPERCONDUCTOR-INSULATOR SUPERLATTICES [J].

SAKAI, S ;

BODIN, P ;

PEDERSEN, NF .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (05) :2411-2418