Properties of Pb(Zr,Ti)O3 ultrathin films under stress-free and open-circuit electrical boundary conditions -: art. no. 220102

被引:34
作者
Almahmoud, E [1 ]
Navtsenya, Y [1 ]
Kornev, I [1 ]
Fu, HX [1 ]
Bellaiche, L [1 ]
机构
[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevB.70.220102
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A first-principles-based scheme is developed to simulate properties of (001) PbO-terminated Pb(Zr1-xTix)O-3 thin films that are under stress-free and open-circuit boundary conditions. Their low-temperature spontaneous polarization never vanishes down to the minimal thickness, and continuously rotates between the in-plane <010> and <110> directions when varying the Ti composition around x=0.50. Such rotation dramatically enhances piezoelectricity and dielectricity. Furthermore, the order of some phase transitions changes when going from bulk to thin films.
引用
收藏
页码:220102 / 1
页数:4
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