Concentration-dependent mobility in organic field-effect transistors probed by infrared spectromicroscopy of the charge density profile

被引：10

作者：

Meyertholen, A. D.

Li, Z. Q.

Basov, Dimitri N.

Fogler, M. M.

Martin, M. C.

Wang, G. M.

Dhoot, A. S.

Moses, D.

Heeger, A. J.

机构：

[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Adv Light Source Div, Berkeley, CA 94720 USA

[3] Univ Calif Santa Barbara, Inst Polymers & Organ Solids, Santa Barbara, CA 93106 USA

[4] Univ Calif Santa Barbara, Mitsubishi Chem Ctr Adv Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 22期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2745223

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors show that infrared imaging of the charge density profile in organic field-effect transistors (FETs) can probe transport characteristics which are difficult to access by conventional contact-based measurements. Specifically, they carry out experiments and modeling of infrared spectromicroscopy of poly(3-hexylthiophene) (P3HT) FETs in which charge injection is affected by a relatively low resistance of the gate insulators. They conclude that the mobility of P3HT has a power-law density dependence, which is consistent with the activated transport in disorder-induced tails of the density of states. (C) 2007 American Institute of Physics.

引用

页数：3