Growth and characterization of sputtered epitaxial γ′Fe4N and NbN films and bilayers using electron backscatter diffraction patterns and magnetometry

被引:22
作者
Loloee, R [1 ]
Nikolaev, KR
Pratt, WP
机构
[1] Michigan State Univ, Dept Phys & Astron, Ctr Sensor Mat, E Lansing, MI 48824 USA
[2] Michigan State Univ, Ctr Fundamental Mat Res, E Lansing, MI 48824 USA
关键词
D O I
10.1063/1.1573356
中图分类号
O59 [应用物理学];
学科分类号
摘要
Epitaxial single-crystal ferromagnetic Fe4N films (gamma' phase of iron nitride), nonmagnetic NbN films, and NbN/Fe4N bilayers were grown on MgO(100) substrates by sputter deposition in N-2 gas. Electron backscatter diffraction patterns were used to characterize the structural properties including the relative crystallographic orientation of the sputter deposited Fe4N and NbN films with respect to the substrate and each other. Superconducting quantum interference device magnetometry was used to study the in-plane uniaxial anisotropy and determine the directions of the easy axes in ferromagnetic Fe4N films. (C) 2003 American Institute of Physics.
引用
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页码:3281 / 3283
页数:3
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