A polymer gate dielectric for high-mobility polymer thin-film transistors and solvent effects

被引：64

作者：

Park, J ^{[1
]}

Park, SY ^{[1
]}

Shim, SO ^{[1
]}

Kang, H ^{[1
]}

Lee, HH ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Chem Engn, Seoul 151744, South Korea

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 15期

关键词：

D O I：

10.1063/1.1805703

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A polymer gate dielectric of poly(2-hydroxyethyl methacrylate) is introduced to the polymer thin-film transistor (TFT) with poly(3-hexylthiophene) as its active layer. With this polymer dielectric, the field-effect mobility is 0.1 cm(2) V-1 s(-1). The solvent used in forming the active layer on the polymer dielectric film has pronounced effects on the device performance. These solvent effects are related to the roughness of the dielectric surface a solvent can induce. The solvent that induces the least roughness is found to be the most desirable for better device performance. The roughness can in turn be related to solubility parameter. (C) 2004 American Institute of Physics.

引用

页码：3283 / 3285

页数：3

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