Theory of the Fano resonance in the STM tunneling density of states due to a single Kondo impurity

被引:280
作者
Ujsághy, O [1 ]
Kroha, J
Szunyogh, L
Zawadowski, A
机构
[1] Tech Univ Budapest, Dept Phys, H-1521 Budapest, Hungary
[2] Tech Univ Budapest, Res Grp, Hungarian Acad Sci, H-1521 Budapest, Hungary
[3] Hungarian Acad Sci, Solid State & Opt Res Inst, H-1525 Budapest, Hungary
[4] Univ Karlsruhe, Inst Theorie Kondensierten Mat, D-76128 Karlsruhe, Germany
关键词
D O I
10.1103/PhysRevLett.85.2557
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The conduction electron density of states nearby single magnetic impurities, as measured recently by scanning tunneling microscopy (STM), is calculated, taking into account tunneling into conduction electron states only. The Kondo effect induces a narrow Fano resonance in the conduction electron density of states. The line shape varies with the distance between STM tip and impurity, in qualitative agreement with experiments, but is very sensitive to derails of the band structure. For a Co impurity the experimentally observed width and shift of the Kondo resonance are in accordance with those obtained from a combination of band structure and strongly correlated calculations.
引用
收藏
页码:2557 / 2560
页数:4
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