Enhanced bandgap blue-shift in InGaAsP multiple-quantum-well laser structures by low-temperature-grown InP

被引：11

作者：

Lee, ASW ^{[1
]}

Thompson, DA ^{[1
]}

Robinson, BJ ^{[1
]}

机构：

[1] McMaster Univ, Ctr Electrophoton Mat & Devices, Hamilton, ON L8S 4L7, Canada

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2000年 / 15卷 / 12期

关键词：

D O I：

10.1088/0268-1242/15/12/101

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quantum well intermixing (QWI) in an InGaAsP multiple-quantnm-well (MQW) laser structure is demonstrated using an InP epitaxial layer grown at 300 degreesC, by gas source molecular beam epitaxy, followed by rapid thermal annealing. Photoluminescence is used to compare the magnitude of the QWI process between low-temperature (LT)- and normal-temperature (NT, 470 degreesC)-grown InP layers as a function of both anneal temperature and time, For example, after an anneal at 780 degreesC, a large bandgap blue-shift of similar to 197 nm is observed in MQW structures capped with LT-InP as compared to an similar to 35 nm shift in identical structures capped with NT-InP, Also, the effect of the LT-InP capping is compared to NT-InP, capped with a dielectric (similar to 100 nm of SiO2), following anneal at 800 degreesC for 60 s. This shows blue-shifts of similar to 243 and similar to 142 nm, respectively.

引用

页码：L41 / L43

页数：3

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