Leakage currents at crystallites in ZrAlxOy thin films measured by conductive atomic-force microscopy

被引:26
作者
Bierwagen, O. [1 ]
Geelhaar, L.
Gay, X.
Piesins, M.
Riechert, H.
Jobst, B.
Rucki, A.
机构
[1] Qimonda, D-81730 Munich, Germany
[2] NaMLab, D-01099 Dresden, Germany
[3] Siemens AG, Corp Technol, D-81730 Munich, Germany
关键词
D O I
10.1063/1.2746058
中图分类号
O59 [应用物理学];
学科分类号
摘要
The spatial distribution of the leakage current through ZrAlxOy thin films with different degrees of crystallinity was investigated at the nanometer-scale. Conductive atomic-force microscopy shows leakage currents at low electric fields in the polycrystalline but not in the amorphous films. Leakage occurs at large crystallites that protrude from the surface. Ring-shaped current distributions around some of the crystallites suggest a conduction at the boundary of crystalline grain and amorphous matrix, and not through the grain. In contrast, the leakage spots that are observed in amorphous films at high electric fields are not correlated to the morphology. (c) 2007 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 16 条
[11]   Study of ZrO2 thin films for gate oxide applications [J].
Nam, SW ;
Yoo, JH ;
Kim, HY ;
Kang, SK ;
Ko, DH ;
Yang, CW ;
Lee, HJ ;
Cho, MH ;
Ku, JH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2001, 19 (04) :1720-1724
[13]   Structural, electronic, and dielectric properties of ultrathin zirconia films on silicon [J].
Sayan, S ;
Nguyen, NV ;
Ehrstein, J ;
Emge, T ;
Garfunkel, E ;
Croft, M ;
Zhao, XY ;
Vanderbilt, D ;
Levin, I ;
Gusev, EP ;
Kim, H ;
McIntyre, PJ .
APPLIED PHYSICS LETTERS, 2005, 86 (15) :1-3
[14]   High-κ gate dielectrics:: Current status and materials properties considerations [J].
Wilk, GD ;
Wallace, RM ;
Anthony, JM .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (10) :5243-5275
[15]   Thermostability of amorphous zirconium aluminate high-k layers [J].
Zhao, C ;
Richard, O ;
Young, E ;
Bender, H ;
Roebben, G ;
Haukka, S ;
De Gendt, S ;
Houssa, M ;
Carter, R ;
Tsai, W ;
Van ber Biest, O ;
Heyns, M .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 303 (01) :144-149
[16]   Structural, electronic, and dielectric properties of amorphous ZrO2 from ab initio molecular dynamics -: art. no. 085107 [J].
Zhao, XY ;
Ceresoli, D ;
Vanderbilt, D .
PHYSICAL REVIEW B, 2005, 71 (08)