Cycloolefin/maleic anhydride copolymers for 193 nm resist compositions

被引：10

作者：

Rahman, MD ^{[1
]}

Bae, JB ^{[1
]}

Cook, M ^{[1
]}

Durham, DL ^{[1
]}

Kudo, T ^{[1
]}

Kim, WK ^{[1
]}

Padmanaban, M ^{[1
]}

Dammel, RR ^{[1
]}

机构：

[1] Clairant Corp, AZ Elect Mat, Somerville, NJ 08876 USA

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2 | 2000年 / 3999卷

关键词：

D O I：

10.1117/12.388306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cycloolefin/maleic anhydride systems are a favorable approach to dry etch resistant resists for 193 nm lithography. This paper reports on poly(BNC/HNC/NC/MA) tetrapolymers, fi-om t-butylnorbomene carboxylate (BNC), hydroxyethyl-norbornene carboxylate (HNC), norbornene carboxylic acid (NC) and maleic anhydride (MA). It was found that moisture has to be excluded in the synthesis of these systems if reproducible results are to be obtained. Lithographic evaluation of an optimized, modified polymer has shown linear isolated line resolution down to 100 nm using conventional 193 nm illumination. Possible reactions of the alcohol and anhydride moieties are discussed, and the effect of the anhydride unit on polymer absorbance is discussed using succinnic anhydride as a model compound.

引用

页码：220 / 227

页数：2

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