Data storage - Multiferroic memories

被引：1132

作者：

Scott, J. F. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Earth Sci, Cambridge CB2 3EQ, England

来源：

NATURE MATERIALS | 2007年 / 6卷 / 04期

关键词：

D O I：

10.1038/nmat1868

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Multiferroics might hold the future for the ultimate memory device. The demonstration of a four-state resistive memory element in a tunnel junction with multiferroic barriers represents a major step in this direction.

引用

页码：256 / 257

页数：3

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