Statistical analysis of electronic properties of alkanethiols in metal-molecule-metal junctions

被引:115
作者
Kim, Tae-Wook [1 ]
Wang, Gunuk
Lee, Hyoyoung
Lee, Takhee
机构
[1] Gwangju Inst Sci & Technol, Heeger Ctr Adv Mat, Kwangju 500712, South Korea
[2] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea
[3] Elect & Telecommun Res Inst, Natl Creat Res Initiat, Ctr Smart Mol Memory, IT Convergence Components Lab, Taejon 305350, South Korea
关键词
D O I
10.1088/0957-4484/18/31/315204
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We fabricated 13 440 molecular electronic devices using different lengths of alkanethiol self-assembled monolayers and performed statistical analyses on the histograms of the electronic transport properties of the alkanethiols. The statistical analysis provides criteria for defining 'working' molecular electronic devices and selecting 'representative' devices. The yield of the working alkanethiol devices was found to be similar to 1.2% (156 out of 13 440 devices) and average transport parameters such as current density, transport barrier height, effective electron mass and tunnelling decay coefficient were obtained from the statistically defined working molecular electronic devices. From the length-dependent tunnelling and temperature-variable current-voltage characteristics of the working devices, the alkanethiol molecular devices showed typical tunnelling transport. However, the statistical consideration for determining working molecular devices should be carried out prior to these characterizations or detailed analysis on them.
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页数:8
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